Thermal and Ar ion beam annealing of surface amorphous layers produced by Sb implanted into 〈100〉 Ni single crystal
Identifieur interne : 000F71 ( Main/Exploration ); précédent : 000F70; suivant : 000F72Thermal and Ar ion beam annealing of surface amorphous layers produced by Sb implanted into 〈100〉 Ni single crystal
Auteurs : A. Belattar [Royaume-Uni] ; G. A. Stephens [Royaume-Uni] ; P. D. Cardwell [Royaume-Uni]Source :
- Nuclear Inst. and Methods in Physics Research, B [ 0168-583X ] ; 1994.
Abstract
The thermal and ion beam annealing of amorphous layers produced by the implantation of 1017 ions cm−2 of Sb at 80 keV into 〈100〉 Ni was investigated using RBS/channelling techniques. The isochronal annealing process was carried out in the temperature range from 250 to 1100°C, whereas the ion beam process involved the use of 1.5 MeV Ar+ ions up to a fluence of 2.4 × 1017 ions cm−2 at a constant temperature of 350°C. The results indicated that irrespective of the anneal process involved, the initial surface amorphous disorder caused by the implantation annealed out in two distinct stages. For Sb peak concentrations above a critical value of 8–9 at.%, there was evidence of some possible form of segregation process occurring particularly during the isothermal annealing at 350°C. During this process, a partial recovery of the crystalline lattice was observed together with only very slight diffusion of Sb atoms. When the Sb peak concentration fell below this critical value, there was a second rapid anneal process which was accompanied with a long range diffusion of the Sb impurities in the Ni lattice. This further restoration of the crystalline lattice was by no means perfect as the high dechannelling level of the observed RBS spectra indicated that an extensive number of dislocation networks still persisted in the surface layer even after prolonged annealing. Following the long range diffusion, the Sb atoms were observed to occupy substitutional sites in the good crystalline region of the Ni lattice.
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DOI: 10.1016/0168-583X(94)95389-9
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Belattar</name><affiliation wicri:level="4"><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT</wicri:regionArea><orgName type="university">Université de Salford</orgName><placeName><settlement type="city">Manchester</settlement><settlement type="town">Salford</settlement><region type="nation">Angleterre</region><region nuts="2" type="region">Grand Manchester</region></placeName></affiliation></author><author><name sortKey="Stephens, G A" sort="Stephens, G A" uniqKey="Stephens G" first="G. A." last="Stephens">G. A. 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The isochronal annealing process was carried out in the temperature range from 250 to 1100°C, whereas the ion beam process involved the use of 1.5 MeV Ar+ ions up to a fluence of 2.4 × 1017 ions cm−2 at a constant temperature of 350°C. The results indicated that irrespective of the anneal process involved, the initial surface amorphous disorder caused by the implantation annealed out in two distinct stages. For Sb peak concentrations above a critical value of 8–9 at.%, there was evidence of some possible form of segregation process occurring particularly during the isothermal annealing at 350°C. During this process, a partial recovery of the crystalline lattice was observed together with only very slight diffusion of Sb atoms. When the Sb peak concentration fell below this critical value, there was a second rapid anneal process which was accompanied with a long range diffusion of the Sb impurities in the Ni lattice. This further restoration of the crystalline lattice was by no means perfect as the high dechannelling level of the observed RBS spectra indicated that an extensive number of dislocation networks still persisted in the surface layer even after prolonged annealing. Following the long range diffusion, the Sb atoms were observed to occupy substitutional sites in the good crystalline region of the Ni lattice.</div></front></TEI><affiliations><list><country><li>Royaume-Uni</li></country><region><li>Angleterre</li><li>Grand Manchester</li></region><settlement><li>Manchester</li><li>Salford</li></settlement><orgName><li>Université de Salford</li></orgName></list><tree><country name="Royaume-Uni"><region name="Angleterre"><name sortKey="Belattar, A" sort="Belattar, A" uniqKey="Belattar A" first="A." last="Belattar">A. Belattar</name></region><name sortKey="Cardwell, P D" sort="Cardwell, P D" uniqKey="Cardwell P" first="P. D." last="Cardwell">P. D. Cardwell</name><name sortKey="Stephens, G A" sort="Stephens, G A" uniqKey="Stephens G" first="G. A." last="Stephens">G. A. Stephens</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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